发明名称 |
Semiconductor substrate having a partial SOI structure, method of manufacturing the same, a semiconductor device having a partial SOI structure, and method of manufacturing the same |
摘要 |
A semiconductor substrate is disclosed which comprises a first single crystal silicon layer, an insulator formed to partially cover one main surface of the first single crystal silicon layer, a second single crystal silicon layer formed to cover a region of the first single crystal silicon layer which is not covered with the insulator, and to cover an edge portion of the insulator adjacent to the region, and a non-single crystal silicon layer formed on the insulator, the interface between the non-single crystal silicon layer and the second single crystal silicon layer being positioned on the insulator.
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申请公布号 |
US7122864(B2) |
申请公布日期 |
2006.10.17 |
申请号 |
US20030439896 |
申请日期 |
2003.05.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAGANO HAJIME;MIYANO KIYOTAKA;MIZUSHIMA ICHIRO |
分类号 |
H01L21/74;H01L27/01;H01L21/00;H01L21/02;H01L21/20;H01L21/322;H01L21/336;H01L21/76;H01L21/762;H01L21/8242;H01L21/84;H01L27/10;H01L27/108;H01L27/12;H01L29/786 |
主分类号 |
H01L21/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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