| 发明名称 |
Capacitor and fabrication method thereof |
| 摘要 |
A fabrication of a capacitor in a semiconductor is simplified by using nitrogen plasma in forming an aluminum nitride layer functioning as an insulation layer on the aluminum layer disposed in a capacitor region. Subsequently, a planarized IMD (inter-metal dielectric) layer is obtained, facilitating via etching process.
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| 申请公布号 |
US7122419(B2) |
申请公布日期 |
2006.10.17 |
| 申请号 |
US20020327991 |
申请日期 |
2002.12.26 |
| 申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KIM JUNG JOO |
| 分类号 |
H01L21/8234;H01L23/52;H01L21/02;H01L21/318;H01L21/3205;H01L21/822;H01L21/8242;H01L27/04;H01L27/108 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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代理人 |
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| 主权项 |
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