发明名称 Lithographic apparatus and method utilizing dose control
摘要 A system and method are used to manufacture a device using at least one exposure step. Each exposure step projects a patterned beam of radiation onto a substrate. The patterned beam includes a plurality of pixels. Each pixel delivers a radiation dose no greater than a predetermined normal maximum dose to the target portion in the exposure step and/or at least one selected pixel delivers an increased radiation dose, greater than the normal maximum dose. The increased dose may be delivered to compensate for the effect of a defective element at a known position in the array on a pixel adjacent a selected pixel or compensate for underexposure of the target portion at the location of a selected pixel resulting from exposure of that location to a pixel affected by a known defective element in another exposure step.
申请公布号 US7123348(B2) 申请公布日期 2006.10.17
申请号 US20040862876 申请日期 2004.06.08
申请人 ASML NETHERLANDS B.V 发明人 TROOST KARS ZEGER;BLEEKER ARNO JAN
分类号 G02B26/08;G03B27/54;G03B27/72;G03F7/20;H01L21/027 主分类号 G02B26/08
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