发明名称 |
Element substrate and light emitting device |
摘要 |
No need of lowering off-current of a switching transistor, fewer luminance variations of a light emitting element between pixels due to characteristic variations of a driving transistor, and less risk of steps due to increase in the number of wirings. A video signal for light emission or non-emission of a pixel is input to a gate of a current controlling transistor operated in a linear region, which is connected in series with the driving transistor, through a switching transistor. Since a voltage Vds between a source and a drain of the current controlling transistor is small, small changes in a voltage Vgs between a gate and a source thereof do not affect a current flowing in a load. The current flowing in the light emitting element is determined by the driving transistor operated in a saturation region, and a fixed potential is input to the gate thereof during light emission.
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申请公布号 |
US7122969(B2) |
申请公布日期 |
2006.10.17 |
申请号 |
US20040866081 |
申请日期 |
2004.06.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
FUKUMOTO RYOTA;ANAZAI AYA;YAMAZAKI YU;OSAME MITSUAKI |
分类号 |
G09G3/10;G09G3/00;G09G3/20;G09G3/30;G09G3/32;G09G5/00;H01L27/12;H01L27/15;H01L27/32;H01L51/30;H05B33/00 |
主分类号 |
G09G3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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