发明名称 |
Aluminum nitride materials and members for use in the production of semiconductors |
摘要 |
A novel aluminum nitride material having a low room temperature volume resistivity is provided. The aluminum nitride material has an aluminum nitride main component and includes at least 0.03 mol % of europium oxide. The aluminum nitride material has an aluminum nitride phase and an europium-aluminum composite oxide phase. An aluminum nitride material also provided having an aluminum nitride main component, wherein a total content of europium oxide and samarium oxide is at least 0.09 mol %. The aluminum nitride material has an aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.
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申请公布号 |
US7122490(B2) |
申请公布日期 |
2006.10.17 |
申请号 |
US20040785774 |
申请日期 |
2004.02.24 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
KOBAYASHI YOSHIMASA;HAYASE TORU;TERATANI NAOMI;YOSHIKAWA JUN;YAMADA NAOHITO |
分类号 |
C04B35/581;C04B35/482;H01L21/68;H01L21/683 |
主分类号 |
C04B35/581 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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