| 摘要 |
A method of forming a Cu-Cu junction between a word line pad (WLP) and bit line (BL) contact is described. An opening above a WL contact is formed in a first SiN<SUB>x </SUB>layer on a substrate that includes a WLP and word line. After a bottom electrode (BE) layer, MTJ stack, and hard mask are sequentially deposited, an etch forms an MTJ element above the word line. Another etch forms a BE and exposes the first SiN<SUB>x </SUB>layer above the WLP and bond pad (BP). An MTJ ILD layer is deposited and planarized followed by deposition of a second SiN<SUB>x </SUB>layer and BL ILD layer. Trenches are formed in the BL ILD layer and second SiN<SUB>x </SUB>layer above the WLP, hard mask and BP. After vias are formed in the MTJ ILD and first SiN<SUB>x </SUB>layers above the WLP and BP, Cu deposition follows to form dual damascene BL contacts. |
