| 摘要 |
The present invention is a plasma processing method including: a step of introducing a substrate into a processing container, a metal or metallic compound film being formed on a surface of the substrate; a step of supplying a noble gas and an H<SUB>2 </SUB>gas into the processing container; and a step of generating plasma in the processing container while the noble gas and the H<SUB>2 </SUB>gas are supplied, so that a natural oxide film formed on a surface of the metal or metallic compound film is removed by means of the plasma. According to the invention, the noble gas and the H<SUB>2 </SUB>gas are supplied into the processing container, the plasma is generated in the processing container, and the plasma acts on the natural oxide film formed on a surface of the metal or metallic compound film. Thus, active hydrogen in the plasma reduces the natural oxide film, and active species of the noble gas etch the natural oxide film. As a result, the natural oxide film can be removed with a satisfactory selective ratio. |
