发明名称 |
Deposition stop time detection apparatus and methods for fabricating copper wiring using the same |
摘要 |
A method for fabricating copper wiring of a semiconductor device comprises forming a deposition stop time detection pattern having two trench structures positioned with a predetermined distance from each other on a dielectric substrate; positioning a deposition stop time detection apparatus having a plurality of detection electrodes and a guide device above the deposition stop time detection pattern; depositing copper on the substrate; and stopping deposition of the copper by an electric signal being generated when the two detection electrodes are electrically connected by the copper deposited in the two trench structure.
|
申请公布号 |
US7122387(B2) |
申请公布日期 |
2006.10.17 |
申请号 |
US20040869263 |
申请日期 |
2004.06.16 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
HAN JAE-WON |
分类号 |
H01L21/66;C25D21/12;H01L21/288;H01L21/44;H01L23/58 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|