Film forming method

摘要

CVD is performed without damaging a micro-fabricated semiconductor element. An organic material gas containing amine is used as deposition material gas. The material gas is introduced into a vacuum chamber and ultraviolet light radiated from each of lamps is applied onto an object to be processed that is placed in the chamber, thereby causing chemical vapor deposition to be carried out, whereby a film is grown at a temperature such that no damage is given to a semiconductor element or the like of the object.