| 发明名称 |
Two step semiconductor manufacturing process for copper interconnects |
| 摘要 |
An embodiment of the invention is a method of manufacturing copper interconnects 30 on a semiconductor wafer 10 where an electroplating process is used to deposit a first layer of copper grains 30 d having an initial grain size and a second layer of copper grains 30 e having a different initial grain size.
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| 申请公布号 |
US7122466(B2) |
申请公布日期 |
2006.10.17 |
| 申请号 |
US20030628198 |
申请日期 |
2003.07.28 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PARK YOUNG-JOON;KRISHNAN SRIKANTH |
| 分类号 |
H01L21/4763;C25D15/00;H01L21/288;H01L21/768;H01L23/532 |
主分类号 |
H01L21/4763 |
| 代理机构 |
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