| 发明名称 |
Bipolar transistor with high dynamic performances |
| 摘要 |
A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.
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| 申请公布号 |
US7122879(B2) |
申请公布日期 |
2006.10.17 |
| 申请号 |
US20040942165 |
申请日期 |
2004.09.16 |
| 申请人 |
STMICROELECTRONICS S.A. |
发明人 |
CHANTRE ALAIN;MARTINET BERTRAND;MARTY MICHEL;CHEVALIER PASCAL |
| 分类号 |
H01L21/28;H01L27/02;H01L21/331;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;H01L29/08;H01L29/36;H01L29/417;H01L29/423;H01L29/45;H01L29/70;H01L29/737;H01L31/11 |
主分类号 |
H01L21/28 |
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