Semiconductor integrated circuit device having static random access memory mounted thereon

摘要

A semiconductor integrated circuit device is configured by eight transistors including the six transistors configuring the data holding section and the two NMOS transistors configuring the reading stage. The threshold voltage of the NMOS transistors configuring the reading stage is set low and the threshold voltage of the six transistors configuring the data holding section is set higher than the threshold voltage of the NMOS transistors configuring the reading stage. The cell current flowing from the bit line to the ground terminal can be set large and the large static noise margin (SNM) can be attained.