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发明名称
半导体装置制造方法
摘要
此方法包括下列步骤:提供一基板;于基板顶部上形成一介电层;于该介电层顶部上沈积一非晶质半导体层;掺杂该非晶质半导体层;并且应用一高温步骤于该非晶质层以自该非晶质半导体形成一结晶化层。
申请公布号
TW200636876
申请公布日期
2006.10.16
申请号
TW095109369
申请日期
2006.03.17
申请人
英飞凌科技股份有限公司
发明人
奥拉夫.史托贝克;延斯.哈恩;史文.施密德鲍尔;约尔根.佛尔;法兰克.雅库鲍斯基;托玛斯.舒斯特尔
分类号
H01L21/336;H01L21/8234
主分类号
H01L21/336
代理机构
代理人
蔡清福
主权项
地址
德国
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