| 摘要 |
A deposition apparatus is provided that has a reaction-chamber, a wafer support, gas supply line, an ejection unit and a diffusion unit. The ejection unit includes a bottom portion spaced apart from a top wall of the reaction chamber to form a space. The diffusion unit is positioned below the gas supply line and includes a planar portion having upwardly extending flanges forming an upwardly open space below the gas supply line. Gas flowing from the gas supply line flows into the upwardly open space and ascends the upwardly extending flanges to diffuse the gas into the space. |
