| 发明名称 |
BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE COMPRISING THE BIPOLAR TRANSISTOR AND PROCESS FOR FABRICATING THEM |
| 摘要 |
A bipolar transistor in which a variation in current gain is prevented and the base resistance is decreased by a simple method. After a base layer is formed on a semiconductor substrate, an opening for leading out a base electrode and an opening for leading out an emitter electrode are simultaneously formed in an insulating film deposited on the base layer. Subsequently, a base electrode lead-out part is formed in the opening for leading out the base electrode and an emitter electrode lead-out part is formed in the opening for leading out the emitter electrode.
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| 申请公布号 |
KR20060107832(A) |
申请公布日期 |
2006.10.16 |
| 申请号 |
KR20067013009 |
申请日期 |
2006.06.29 |
| 申请人 |
SONY CORPORATION |
发明人 |
BAIRO MASAAKI |
| 分类号 |
H01L21/28;H01L29/73;H01L21/265;H01L21/331;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;H01L29/10;H01L29/417;H01L29/423;H01L29/732;H01L29/737 |
主分类号 |
H01L21/28 |
| 代理机构 |
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