| 摘要 |
The invention is to provide a novel non-volatile memory capable of recording multi-bit data. The invention is a non-volatile memory which has: first and second source-drain regions SD1, SD2 at the surface of a semiconductor substrate; and a non-conductive trapping gate TG, and a conductive control gate CG, formed on a channel region there between via an insulating film. Further, the non-volatile memory has a first or second state in which, by applying a voltage between the first and second source-drain regions SD1, SD2, hot electrons produced in the vicinity of the first or second source-drain region are locally captured in a first or second trapping gate region TSD1, TSD2 in the vicinity of them; and, a third state in which, by applying a voltage between the control gate and the channel region, electrons (or charge) are (is) injected into the entire trapping gate. According to whether or not the above-mentioned third state is adopted, one-bit information can be recorded, and according to whether or not the first and second states are adopted, two-bit information can be recorded. Consequently, information totaling three bits can be recorded in a single memory cell. |
