LIGHT-EMITTING SEMICONDUCTOR COMPONENT COMPRISING A PROTECTIVE DIODE

摘要

The invention relates to a light- emitting semiconductor component comprising a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is embodied. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective diode section (8) in a lateral direction by means of an insulating section (6). An n-doped layer (9) which forms a second pn junction (10) that acts as a protective diode along with the p- doped area (4) is applied to the p-doped area (4) in the zone of the protective diode section (8). The first pn junction (5b) in the protective diode section (8) is provided with a larger area than the first pn junction (5a) in the light-emitting section (7). The protective diode section (8) protects the semiconductor component from voltage pulses due to electrostatic discharges (ESD).