| 摘要 |
<p>The present invention provides a miniaturized semiconductor device at low-cost having high integration density and for restraining an increase of an insertion loss and a deterioration of an isolation characteristic of a circuit resulting from parasitic inductance of gold wires. The semiconductor device includes a control semiconductor chip, a switch circuit semiconductor chip, a substrate, external terminals, gold wires and MIM capacitors. The control semiconductor chip controls a high frequency signal processing by the switch circuit semiconductor chip 111 . The switch circuit semiconductor chip is mounted on the control semiconductor chip and processes the high frequency signal. The control semiconductor chip is mounted on the substrate. The external terminals are interfaces with the outside. The gold wires connect among the control semiconductor chip, the switch circuit semiconductor chip and the external terminals. The MIM capacitors are formed on the control semiconductor chip and the inside of the substrate, and process the high frequency signal.</p> |
