| 摘要 |
There is provided a non-volatile memory device capable of improving screening test accuracy while applying voltage below the limit voltage of a high-voltage element in the screening test. The non-volatile memory device (51) includes: a high- voltage generation circuit (7) for generating a high voltage; a high- voltage waveform conversion circuit (58) for inputting the high voltage and converting the voltage waveform; and a memory cell unit (2) for performing data rewrite by applying the converted high voltage. The high- voltage waveform conversion circuit (58) has a test signal input unit TEST. When a test signal is inputted to this test signal input unit, a high voltage inputted from the high-voltage generation circuit (7) is applied to the memory cell unit (2) without converting the voltage waveform.
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