METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING RECESS CHANNEL

摘要

A method for fabricating a semiconductor device with a recess channel is provided to prevent an abnormal oxidation phenomenon by avoiding a seam in a metal silicide layer even if the upper part of a gate conductive layer has a profile of a groove type. A trench(220) for a recess channel is formed in a semiconductor substrate(200) having an active region defined by a trench isolation layer. A gate insulation layer(230) is formed on the semiconductor substrate having the trench for the recess channel. A gate conductive layer(240) is formed on the gate insulation layer to fill the trench for the recess channel. A metal silicide layer having a thickness of 500~2000 angstroms is formed on the gate conductive layer wherein a predetermined thickness of the metal silicide layer is made of a silicon-rich metal silicide layer(252) having relatively rich silicon. An insulating hard mask layer is formed on the metal silicide layer. The insulating hard mask layer, the metal silicide layer and the gate conductive layer are patterned to form a gate stack.