| 摘要 |
A method for fabricating a capacitor in a semiconductor device is provided to remove a leakage current by improving the step coverage of a conductive material. A first oxide layer(23) is formed on a semiconductor substrate(21) having a storage node contact. The first oxide layer is etched to form a first storage node region. A first conductive layer is formed on the first storage node region. A second oxide layer(29) is formed on the resultant structure. The second oxide layer is etched to form a second storage node region(31) exposing the first storage node region. A second conductive layer(33) is formed in the first storage node region and the second storage node region. The first oxide layer has higher etch selectivity than that of the second oxide layer.
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