METHOD FOR FABRICATING TRANSISTOR IN SEMICONDUCTOR DEVICE

摘要

A method for forming a transistor of a semiconductor device is provided to decrease the number of process steps by selectively forming a spacer layer of a gate pattern by a micro contact printing method. A gate pattern(280) is formed on a semiconductor substrate(230) having a cell region and a peripheral circuit region. A buffer oxide layer(290) and a silicon nitride layer(300) are formed on the gate pattern and the semiconductor substrate. An oxide control material is coated on the silicon nitride layer in a region except an oxide layer formation region for a gate spacer. An oxide layer for the gate spacer is formed on the gate pattern. The oxide control material is removed by using etchant including sulfuric acid and hydrogen peroxide.