| 摘要 |
A method for fabricating a semiconductor device is provided to avoid a horn phenomenon occurring in forming a recessed channel by simultaneously forming an isolation region and a trench for a recess gate. A mask layer pattern in which a pad oxide layer pattern and a pad nitride layer pattern are formed is formed on a semiconductor substrate(400). A photoresist pattern for defining a trench formation region is formed on the mask layer pattern. By using the photoresist pattern as an etch mask, first and second trenches(510,520) are formed in the semiconductor substrate. A buried insulation layer(560) is formed to bury the first and the second trenches and the semiconductor substrate. An open mask is formed to expose the second trench in the semiconductor substrate. By using the open mask as an etch mask, the buried insulation layer in the second trench is eliminated. A plurality of gates are formed to overlap the second trench.
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