| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide semiconductor devices having a super junction structure wherein the ON-resistance of each semiconductor device is made low, and its withstanding voltage is made high. <P>SOLUTION: In the semiconductor devices, p-type base layers 3 are formed in the element region surrounded by a p-type guard ring layer 10 on a pillar layer alternately comprising p-type pillar layers 2 and n-type pillar layers 5. Each MOSFET having each planar gate structure is formed thereon. Further, the junction depth of each p-type base layer 3 is made smaller than the one of the p-type guard ring layer 10. <P>COPYRIGHT: (C)2007,JPO&INPIT |
