| 摘要 |
PROBLEM TO BE SOLVED: To provide a quality evaluation method of a silicon single-crystal wafer, capable of facilitating a speedy visual determination of the defect-free regions of a silicon single-crystal wafer. SOLUTION: The quality evaluation method of the silicon single-crystal wafer comprises a heat treating first process for contaminating the surface of the silicon wafer with Fe having a density of 5 to 10 E10 atoms/cm<SP>2</SP>, charging the silicon wafer into the heat-treating furnace, and holding it for not less than 2 hours at temperatures from 900 to 1,200°C; and a heat-treating second process for holding it for not less than 2 hours at temperatures from 500 to 700°C. Conducting the both heat treating processes in a dry oxygen atmosphere generates a pollutant-element-induced defects on the surface of the silicon single-crystal wafer and visually determines the non-defective region of the silicon single crystal. COPYRIGHT: (C)2007,JPO&INPIT
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