| 摘要 |
PROBLEM TO BE SOLVED: To solve the following problem: a barrier film and a base formed beneath it can be damaged due to HF remaining in a chamber when a W thin film is formed. SOLUTION: SiH<SB>4</SB>gas is introduced into the chamber to remove HF remaining in the chamber before a semiconductor substrate is conveyed into the chamber. Damage to a barrier layer or a base due to HF is thereby avoided. COPYRIGHT: (C)2007,JPO&INPIT
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