| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a Schottky source/drain for preventing the deterioration of the reliability of a gate insulating film or the deterioration of current driving capability. SOLUTION: A Schottky source/drain 12 is formed so that a gate electrode 7 can be interposed. The Schottky source/drain 12 forms Schottky junction with a semiconductor substrate 1. An extension layer 2 is formed by impurity diffusion from the Schottky source/drain 12 to the lower edge of a gate insulating film 4. The lower edge of the gate insulating film 4 is formed on an impurity diffusion layer, so that the reliability of the gate insulating film 4 can be prevented from being deteriorated. Also, carrier injection through pn junction to a channel is carried out so that the deterioration of current driving capability can be prevented. COPYRIGHT: (C)2007,JPO&INPIT
|
