| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can easily fabricate an element isolator of the STI structure and reduce the required manufacturing time and costs, as well as a semiconductor device. SOLUTION: Grooves 12a and 12b are formed on the main plane of a silicon substrate 11. Then, a primary insulating film is formed over the whole area of the silicon substrate 11 including the grooves 12a and 12b so that the grooves 12a and 12b may never be buried. Subsequently, the grooves 12a and 12b are buried into the primary insulating film, and a secondary insulating film is formed which covers the main plane of the silicon substrate 11. The top surface of the secondary insulating film is polished for the planarizing process until the primary insulating film formed on the main plane of the silicon substrate 11 is exposed. In this process, the primary insulating film is formed as a silicon oxide film 13 wherein its top surface remains in at least a silicon-rich state, while the secondary insulating film is formed as a silicon oxide film 14. COPYRIGHT: (C)2007,JPO&INPIT
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