发明名称 Method for conditioning a microelectronics device deposition chamber
摘要 The present invention provides, in one aspect, the present invention provides, in one embodiment, a method of conditioning a deposition chamber 100. This method comprises placing an undercoat on the walls of a deposition chamber 100 and depositing a pre-deposition coat over the undercoat with a plasma gas mixture conducted at a high pressure and with high gas flow.
申请公布号 US2006228905(A1) 申请公布日期 2006.10.12
申请号 US20050103860 申请日期 2005.04.12
申请人 TEXAS INSTRUMENTS, INCORPORATED 发明人 PAVONE SALVATOR F.;NEW JASON J.
分类号 H01L21/31 主分类号 H01L21/31
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