METHOD AND SYSTEM FOR FORMING AN OXYNITRIDE LAYER BY PERFORMING OXIDATION AND NITRIDATION CONCURRENTLY
摘要
<p>A method for preparing an oxynitride film on a substrate comprising forming the oxynitride film by exposing a surface of the substrate to oxygen radicals and nitrogen radicals formed by plasma induced dissociation of a process gas comprising nitrogen and oxygen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits.</p>
申请公布号
WO2006107416(A2)
申请公布日期
2006.10.12
申请号
WO2006US05420
申请日期
2006.02.16
申请人
TOKYO ELECTRON LIMITED;INTERNATIONAL BUSINESS MACHINES CORPORATION;WAJDA, CORY;FURUKAWA, TOSHIHARA;SCHEER, KRISTEN