发明名称 METHOD AND SYSTEM FOR FORMING AN OXYNITRIDE LAYER BY PERFORMING OXIDATION AND NITRIDATION CONCURRENTLY
摘要 <p>A method for preparing an oxynitride film on a substrate comprising forming the oxynitride film by exposing a surface of the substrate to oxygen radicals and nitrogen radicals formed by plasma induced dissociation of a process gas comprising nitrogen and oxygen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits.</p>
申请公布号 WO2006107416(A2) 申请公布日期 2006.10.12
申请号 WO2006US05420 申请日期 2006.02.16
申请人 TOKYO ELECTRON LIMITED;INTERNATIONAL BUSINESS MACHINES CORPORATION;WAJDA, CORY;FURUKAWA, TOSHIHARA;SCHEER, KRISTEN 发明人 WAJDA, CORY;FURUKAWA, TOSHIHARA;SCHEER, KRISTEN
分类号 B01J19/08;H01L21/20 主分类号 B01J19/08
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