MEMORY HAVING CHARGE STORAGE NODE HAVING AT LEAST A PART POSITIONED IN TRENCH OF SEMICONDUCTOR SUBSTRATE AND ELECTRICALLY COUPLED WITH SOURCE/DRAIN REGIONS FORMED ON SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide an integrated circuit facilitating manufacture by a new technology of a memory with a storage electrode formed in a downsized trench.

SOLUTION: Blocking features for a plurality of trenches 124 in a memory array is patterned by using a mask forming a plurality of straight strips passing through each memory array in a line writing direction. The charge storage node has a projection 120.3 on a first side of a trench adjacent to source/drain regions, and also has an upper surface portion (T) adjacent to the projection along the side face. A trench sidewall covers an upper surface (T), and has a part (S) that is roughly straight in a second side 124.2. A dielectric film 144.1 in the trench sidewall has a thicker part in the second side than that in the first side.

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