| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory in which rewriting in byte unit can be performed. <P>SOLUTION: A memory cell array has a unit formed from one memory cell and two select transistors sandwiching the memory cell. One block has one control gate line, memory cells connected to one control gate line form one page. A sense amplifier having a latch function is connected to a bit line. In a data rewrite operation, data of memory cells of one page are read to the sense amplifier. After new data are overwritten on selected data in the sense amplifiers and page erase is performed, data in the sense amplifiers are written in the memory cells of one page. Overwriting data in the sense amplifiers allows data rewrite operation in byte unit. <P>COPYRIGHT: (C)2007,JPO&INPIT |
