| 摘要 |
PROBLEM TO BE SOLVED: To provide a ceramic heater for a semiconductor manufacturing apparatus which can prevent the generation of damage at the time of thermal processing and improve soaking performance on the surface of a wafer by optimizing a distance between wirings of a resistive heat generator. SOLUTION: In the ceramic heater 1 for a semiconductor manufacturing apparatus which has a resistive heat generator 3 on the surface or in the inside of the ceramic substrates 2a, 2b, the distance between adjacent wirings of the resistive heat generator 3 is set at 0.1-5 mm, preferably, 1.0-5 mm. For the ceramic heater 1, a plasma electrode may be additionally arranged on the surface or in the inside of the ceramic substrates 2a, 2b. Further, the ceramic substrates 2a, 2b are preferably made of at least one kind selected from among aluminum nitride, silicon nitride, acid aluminum nitride and silicon carbide. COPYRIGHT: (C)2007,JPO&INPIT
|
