| 摘要 |
PROBLEM TO BE SOLVED: To form crystal defective regions at specific depths in a semiconductor device. SOLUTION: An unevenly thick metal film (2) is formed on one principal surface (1a) of a semiconductor substrate 1 by plating metal of one kind or two kinds or more selected from a group comprising aluminum (Al), copper (Cu), platinum (Pt), lead (Pb) or their alloys; and exposed surfaces (2a) of the metal film (2) are mechanically cut or polished to flatten the exposed surfaces (2a) of the metal film (2). Recesses (3) are subsequently formed by etching the exposed surfaces (2a) of the flattened metal film (2), and radiation (5) is irradiated to the semiconductor substrate (1) through the metal film (2) where the recesses (3) are formed to form the crystal defective regions (6) at almost even depths D<SB>1</SB>, D<SB>2</SB>in the semiconductor substrate (1). COPYRIGHT: (C)2007,JPO&INPIT
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