| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device, having a very small leakage current at cutoff. SOLUTION: A semiconductor laminate structure 10 is obtained by sequentially forming, in this order an insulating single crystal film 12 used as a ground, and a semiconductor single-crystal film 13, used as a channel layer on an insulating single crystal substrate 11, used as the base material. The semiconductor single-crystal film 13 consists of an epitaxial film whose film thickness is 100 nm or smaller. In the semiconductor laminate structure 10, in order to realize the thin semiconductor single-crystal film 13 having few defects, compositions of the insulating single-crystal film 12 and the semiconductor single-crystal film 13 are determined so that each of lattice mismatch in the surface directions of the insulating single-crystal film 12 and the semiconductor single-crystal film 13 is be 5% or lower. COPYRIGHT: (C)2007,JPO&INPIT
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