SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of making to coexist the lowering of an on resistance and increase of the breakdown strength of a field-effect transistor utilizing a hetero-interface and a manufacturing method for the semiconductor device. SOLUTION: The semiconductor device has a hetero-semiconductor region (consisting of a first hetero-semiconductor region 4, a second hetero-semiconductor region 3, a source extracting region 14 and a contact region 13) being formed, while being brought into contact with one main surface of a semiconductor substrate composed of an n+-type SiC substrate 1 and an n--type SiC drain region 2 and having a different band gap from the semiconductor substrate. The semiconductor device further has a gate electrode 7 formed to a section adjacent to a joining section between the hetero-semiconductor region and the semiconductor substrate through a gate insulating film 6, a source electrode 8 connected to the hetero-semiconductor region, and a drain electrode 10 ohmic-connected to the semiconductor substrate. In such a semiconductor device, the hetero-semiconductor region is composed of a first layer polycrystalline Si layer 11 and a second polycrystalline Si layer 12. COPYRIGHT: (C)2007,JPO&INPIT