发明名称 |
SEMICONDUCTOR MANUFACTURING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR CLEANING THE SEMICONDUCTOR MANUFACTURING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To effectively remove any reaction product attached to a narrow clearance between a wafer stage and a focus ring in a semiconductor manufacturing device using plasma discharge. SOLUTION: In this semiconductor manufacturing device, a semiconductor wafer is placed on a wafer stage 2 in a plasma chamber 1, and plasma treatment is carried out to the semiconductor wafer while plasma quantity is adjusted under the control of a focus ring 4 in the outer periphery of the wafer stage 2 by using a plasma to be generated in the chamber 1, and the semiconductor wafer after plasma treatment is carried out of the chamber 1. This semiconductor manufacturing includes a step for relatively displacing the wafer stage 2 and the focus ring 4, in order to increase the degree of exposure of the outer peripheral face of the wafer stage 2 or the inner peripheral face of the focus ring 4, while the semiconductor wafer is not present in the plasma chamber 1 and a step for generating plasma in the chamber 1; for making the plasma react with a reaction product 5 residing in the chamber 1; and for gasifying and exhausting it. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2006278821(A) |
申请公布日期 |
2006.10.12 |
申请号 |
JP20050097085 |
申请日期 |
2005.03.30 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YAMASHITA TAKESHI;YAMAGUCHI MINEO |
分类号 |
H01L21/3065;C23C16/44;C23C16/509 |
主分类号 |
H01L21/3065 |
代理机构 |
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