| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of satisfactorily extracting characteristics of a ferroelectric film even if it is made thin. SOLUTION: After a lower electrode film 9 is formed, the ferroelectric film 10 is formed on the lower electrode film 9. Then, the ferroelectric film 10 is crystallized by subjecting the ferroelectric film 10 to heat treatment in an oxygen atmosphere. Further, an upper electrode film 11 is formed on the ferroelectric film 10. Upon the heat treatment (crystallization annealing), a flow rate of oxidative gas is assumed to be 10 sccm to 100 sccm. COPYRIGHT: (C)2007,JPO&INPIT
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