| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can use a high dielectric constant insulating film for a gate insulating film and a method of manufacturing it without being accompanied by the deterioration of transistor characteristics. SOLUTION: The high dielectric constant insulating films 14 on a silicon substrate 10 and both sides of a gate electrode 16 and an element isolation film 12 are removed by forming a gate electrode 16, by patterning a polysilicon film, and dry etching using plasma according to a mixed gas including gas for ground protection for forming a protective layer for protecting the silicon substrate 10 and the element isolation film 12 by combining silicon and gas for etching which etches the high dielectric constant insulating film 14. COPYRIGHT: (C)2007,JPO&INPIT
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