发明名称 THIN FILM FOR INFRARED SENSOR, ITS MANUFACTURING METHOD AND INFRARED SENSOR USING IT
摘要 PROBLEM TO BE SOLVED: To provide a thin film for an infrared sensor which shows sensitivity excellent also in a room temperature, and by which a noise generation is also suppressed. SOLUTION: An epitaxial growth of an oxide expressed with a general formula (La<SB>1-x</SB>AE<SB>x</SB>)MnO<SB>3</SB>(wherein it is 0.02≤x≤0.5, and AE is Ba or Sr) is carried out on a single crystal texture substrate, and depositing of the thin film for the infrared sensor is carried out. As the formation material of the above substrate, it is desirable that it is a material about larger lattice constant than the lattice constant of the above oxide. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006278478(A) 申请公布日期 2006.10.12
申请号 JP20050092164 申请日期 2005.03.28
申请人 OSAKA UNIV 发明人 KAWAI TOMOJI;KARAYAMA HIDEAKI;KANAI MAKI;TANAKA HIDEKAZU
分类号 H01L37/00;G01J1/02;H01C7/04 主分类号 H01L37/00
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