| 摘要 |
PROBLEM TO BE SOLVED: To prevent puncture due to secondary breakdown by preventing concentration of current on one unit element even if the operating current becomes uneven among unit elements. SOLUTION: In the switching circuit device, an HBT 101 and an FET 102 are contiguously arranged through an isolation region, and a plurality of unit elements where the base electrode of the HBT is connected with the source electrode of an MESFET are connected. Consequently, in the switching circuit device connecting a plurality of unit elements in parallel, current does not concentrate on one unit element 100 even if the operating current of each unit element becomes uneven and thereby puncture due to secondary breakdown is prevented. COPYRIGHT: (C)2007,JPO&INPIT
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