发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR PORCELAIN COMPOSITION |
摘要 |
[PROBLEMS] To provide a method for producing a semiconductor porcelain composition which can shift the Currie temperature to the positive direction without the use of Pb and can produce a semiconductor porcelain composition being markedly reduced in the resistivity at room temperature, and a method for producing a semiconductor porcelain composition which can impart uniform characteristics also to the interior of a material with no complicated heat treatment even if the material has a shape of a relatively great thickness. [MEANS FOR SOLVING PROBLEMS] A method for producing a semiconductor porcelain composition which has an empirical formula represented by [(Bi<SUB>0.5</SUB>Na<SUB>0.5</SUB>)<SUB>x</SUB>(Ba<SUB>1-y</SUB>R<SUB>y</SUB>)<SUB>1-x</SUB>]TiO<SUB>3</SUB> (where R is at least one of La, Dy, Eu, Gd and Y), where x and y satisfy 0 < x = 0.14 and 0.002 < y = 0.02, and wherein the sintering of the composition is carried out in an inert gas atmosphere having an oxygen concentration of 1 % or less, and thereby, the resistivity at room temperature can be remarkably reduced and uniform characteristics can be imparted also to the interior of the resultant material. |
申请公布号 |
WO2006106910(A1) |
申请公布日期 |
2006.10.12 |
申请号 |
WO2006JP306816 |
申请日期 |
2006.03.31 |
申请人 |
NEOMAX CO., LTD.;SHIMADA, TAKESHI;TERAO, KOICHI;TOJI, KAZUYA |
发明人 |
SHIMADA, TAKESHI;TERAO, KOICHI;TOJI, KAZUYA |
分类号 |
C04B35/468;H01L37/00 |
主分类号 |
C04B35/468 |
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