| 摘要 |
<p>A method of manufacturing a semiconductor device includes implanting an impurity into a crystalline semiconductor film that is formed over a base and includes a first part in contact with the base, a second part and a third part, so that at least the second part and the third part are doped with the impurity while the first part is prevented from being doped with the impurity, and forming a source and a drain in the second part and the third part, respectively. The implanting includes depositing a material of the crystalline semiconductor film over the base. The forming includes heating at least the second part and the third part.</p> |
