| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of fine particle diffused insulating films which may be formed on various substrates including a glass substrate, and assures the high surface density of the semiconductor fine particles within the fine particle diffused insulating film working as the center of recoupling for the emission of light of a charge holding node or a carrier, and uniform surface density for a wider range in the film thickness direction, and also to provide a memory element, a manufacturing method of a light emitting element, a memory element, and the light emitting element using the same film. <P>SOLUTION: The manufacturing method of a fine particle diffused insulating film 15 comprises steps of forming an insulating film 150 of a composition including an excessive amount of a semiconductor element on a substrate 11, and forming the diffused semiconductor fine particle 152 by phase-separating the semiconductor element by an annealing process using the plasma jet 50 of the insulating film 150. <P>COPYRIGHT: (C)2007,JPO&INPIT |
