| 发明名称 |
ELEMENT, AND METHOD OF MANUFACTURING SAME |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide the technique of a countermeasure against resist poisoning. <P>SOLUTION: An element is formed using a resist film. A C-based C-containing film 4 and an N-based N-containing film 6 are provided under a part where the resist film is provided, and a barrier layer 5 is provided so as to stop the component element of the C-containing film 4 from reacting on that of the N-containing film 6. The barrier layer 5 is set as thick as 20 nm or above, and has a C content of below 10 atom%. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
| 申请公布号 |
JP2006278723(A) |
申请公布日期 |
2006.10.12 |
| 申请号 |
JP20050095537 |
申请日期 |
2005.03.29 |
| 申请人 |
CONSORTIUM FOR ADVANCED SEMICONDUCTOR MATERIALS &RELATED TECHNOLOGIES |
发明人 |
NAKAO HAJIME;NARITA TAKENORI;YANAI KENICHI |
| 分类号 |
H01L21/768;H01L21/318;H01L23/522 |
主分类号 |
H01L21/768 |
| 代理机构 |
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