发明名称 MANUFACTURING METHOD OF TRANSISTOR LOGIC CIRCUIT
摘要 PROBLEM TO BE SOLVED: To easily provide a low price method for manufacturing, on a general purpose plastic substrate, a complementary logic circuit ensuring large logic amplitude and small power consumption. SOLUTION: The low price complementary logic circuit ensuring large logic amplitude and small power consumption can be easily manufactured on a general purpose plastic substrate by comprising at least the steps of forming a first electrode (gate electrode) on an insulated substrate, forming a gate insulting film having an aperture, forming an oxide semiconductor pattern on the gate insulating film, forming a second electrode by forming a gate connecting electrode to the position of the aperture of the gate insulating film, forming oppositely a source electrode and a drain electrode on the oxide semiconductor pattern, forming an organic semiconductor pattern, forming an interlayer insulating film having an aperture, and forming a third electrode (wiring electrode) to the aperture position of the interlayer insulating film. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006278621(A) 申请公布日期 2006.10.12
申请号 JP20050094033 申请日期 2005.03.29
申请人 TOPPAN PRINTING CO LTD 发明人 ISHIZAKI MAMORU;NAKAMURA RYUICHI;KON MASATO;ITO MANABU
分类号 H01L29/786;H01L21/336;H01L51/05 主分类号 H01L29/786
代理机构 代理人
主权项
地址