| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-sensitivity solid-state image pickup element excellent in optical characteristics by planarizing a charge transfer electrode, and also, excellent in charge transfer characteristics while having a first layer electrode and a second layer electrode uniform in film thickness. SOLUTION: The solid-state image pickup element manufacturing method is used for manufacturing the solid-state image pickup element provided with a photoelectric converter, and a charge transfer having the charge transfer electrode in a single layer structure that transfers charges made to occur in the photoelectric converster. The method includes a first planarization process in which planarization is executed by a chemical mechanical polishing (CMP) method when planarizing after forming a second layer conductive film on the first layer electrode via an insulating film, and a second planarization process for etching the second layer conductive film so as to have almost the same height as that of the first layer electrode 3a by an etch back method. The height of the first layer electrode 3a and that of the second layer electrode 3b are leveled. Consequently, a flat and high-sensitivity solid-state image pickup element can be formed. COPYRIGHT: (C)2007,JPO&INPIT
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