| 摘要 |
PROBLEM TO BE SOLVED: To provide a horizontal diffusion furnace and a method of a diffusion wafer using the same which uniformly forms a diffusion layer in a plane and in a batch on the wafer surface. SOLUTION: The furnace has a horizontally disposed furnace body having a process gas inlet at one side and a furnace opening at the other side, a shield for adequately closing the furnace opening, an annular exhaust hole provided in the shield so as to locate near the periphery of the furnace opening, and an annular exhaust way communicating with the exhaust hole, the opening area of which gradually decreases. COPYRIGHT: (C)2007,JPO&INPIT
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