| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabrication method for improving the memory holding time of an organic memory device. SOLUTION: As shown on Fig. 1, oxidizing gas is introduced when a fine particle dispersion layer 4 is formed in a method for fabricating an organic memory device comprising a first electrode 2, a first organic bistable material layer 3, the fine particlate dispersion layer 4, a second organic bistable material layer 5, and a second electrode 6. Any one of oxygen, ozone or steam is used as the oxidizing gas. COPYRIGHT: (C)2007,JPO&INPIT
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