发明名称 Tri-state RF switch
摘要 A tri-state RF MEMS switch includes: a first well formed in a first substrate; a first input signal line and a first output signal line forming a first gap therebetween in the first well; a post bar forming a boundary between the second well and third well in the second substrate; a second input signal line and a second output signal line, and a third input signal line and a third output signal line forming a second gap and a third gap in the second well and the third well, respectively; and a membrane disposed between the first substrate and the second substrate such that the membrane crosses the first, second and third gaps, the membrane including a first conductive pad, a second conductive pad, and a third conductive pad thereon to face the first, second and third gaps, respectively.
申请公布号 US2006229045(A1) 申请公布日期 2006.10.12
申请号 US20060345237 申请日期 2006.02.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI HYUNG;JIAO JIWEI;WANG YUELIN;XING XIANGLONG
分类号 H04B1/06 主分类号 H04B1/06
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